Growth and interdiffusion of ultrathin films

نویسنده

  • J.-W. He
چکیده

The growth and interdiffusion of Ti and Ni on a Mo( 110) surface have been studied by Auger electron spectroscopy (AES), low energy electron diffraction (LEED) and temperature programmed desorption spectroscopy (TPD). Ti grows layer-by-layer upon deposition on MO{ 110) at 115 K, whereas annealing multifaye~ of Ti to 900 K causes formation of Ti three-dimensional clusters. Submonolayer Ti on Mo( I IO), annealed to 30~700 K, induces a LEED pattern interpreted to arise from a Ti overlayer with a distorted Ti(OOO1) lattice. This pattern disappears upon annealing above 700 K, consistent with a phase transition from a distorted Ti(OOO1) lattice to a pseudomorphic structure. On a Mo( 110) surface first covered with Ni and then Ti (or deposited in the reverse order), Ti and Ni interdiffuse to form a Ti-Ni compound when annealed above 300 K.

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تاریخ انتشار 2002